Interface for refreshing non-volatile memory

ABSTRACT

Methods, systems, and devices supporting an interface for refreshing non-volatile memory are described. In some examples, a host system may communicate with a memory system, where both the host system and the memory system may be included within a vehicle (e.g., an automotive system). The host system may receive an indication that the vehicle is powering down (e.g., shutting off an engine or lowering power output from a battery). The host system may switch from a first mode corresponding to a first power usage to a second mode corresponding to a second, lower power usage in response to the vehicle powering down, the second mode supporting initiation of a refresh operation at the memory device. The host system may transmit a refresh command to the memory system to refresh non-volatile memory while the vehicle is powered down if the host system is operating in the second mode of operation.

CROSS REFERENCE

The present application for patent claims priority to U.S. Provisional Patent Application No. 63/229,333 by Bueb et al., entitled “INTERFACE FOR REFRESHING NON-VOLATILE MEMORY” and filed Aug. 4, 2021, which is assigned to the assignee hereof and is expressly incorporated by reference in its entirety herein.

FIELD OF TECHNOLOGY

The following relates generally to one or more systems for memory and more specifically to an interface for refreshing non-volatile memory.

BACKGROUND

Memory devices are widely used to store information in various electronic devices such as computers, user devices, cameras, digital displays, and the like. Information is stored by programing memory cells within a memory device to various states. For example, binary memory cells may be programmed to one of two supported states, often corresponding to a logic 1 or a logic 0. In some examples, a single memory cell may support more than two possible states, any one of which may be stored by the memory cell. To access information stored by a memory device, a component may read, or sense, the state of one or more memory cells within the memory device. To store information, a component may write, or program, one or more memory cells within the memory device to corresponding states.

Various types of memory devices exist, including magnetic hard disks, random access memory (RAM), read-only memory (ROM), dynamic RAM (DRAM), synchronous dynamic RAM (SDRAM), static RAM (SRAM), ferroelectric RAM (FeRAM), magnetic RAM (MRAM), resistive RAM (RRAM), flash memory, phase change memory (PCM), 3-dimensional cross-point memory (3D cross point), not-or (NOR) and not-and (NAND) memory devices, and others. Memory devices may be volatile or non-volatile. Volatile memory cells (e.g., DRAM cells) may lose their programmed states over time unless they are periodically refreshed by an external power source. Non-volatile memory cells (e.g., NAND memory cells) may maintain their programmed states for extended periods of time even in the absence of an external power source.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 through 3 illustrate examples of systems that support an interface for refreshing non-volatile memory in accordance with examples as disclosed herein.

FIG. 4 illustrates an example of a process flow that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein.

FIG. 5 shows a block diagram of a host system that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein.

FIG. 6 shows a block diagram of a memory system that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein.

FIG. 7 shows a block diagram of a vehicle system that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein.

FIGS. 8 through 10 show flowcharts illustrating a method or methods that support an interface for refreshing non-volatile memory in accordance with examples as disclosed herein.

DETAILED DESCRIPTION

A host system may communicate with a memory system including a memory device configured to operate in a range of ambient temperatures. In some cases, operating the memory device at various temperatures may result in varying operating characteristics of the memory device. For example, automotive systems (e.g., vehicles, vehicle components, vehicle processors or controllers) may operate at a variety of temperatures, which may include temperatures (e.g., extreme temperatures) relatively higher than a nominal temperature of a memory device, the nominal temperature supporting one or more performance characteristics for the memory device. In some cases, one or more non-volatile blocks of the memory device may be programmed at extreme temperatures, for example, while an automotive system is powered on (e.g., due to ambient heat from an engine, a battery, or any other heat source in the environment of the memory device). However, programming blocks of the memory device at extreme temperatures may result in relatively unreliable data storage. In some cases, the memory system may not be able to accurately read the blocks due to a difference in operating characteristics at a programming temperature and a read temperature, for example, a read temperature after the automotive system has been powered off for an extended period of time, allowing the automotive system to cool down. Additionally or alternatively, due to such read failures, the memory device may fail to retain data programmed at extreme temperatures for relatively long periods of time. For example, the automotive system may turn on after a relatively long period of time and the memory system may fail to refresh non-volatile blocks of the memory device, potentially result in a loss of data. In some cases, memory devices including memory cells configured to store more than one bit per memory cell (e.g., multi-level cell (MLC) devices, tri-level cell (TLC) devices, quad-level cell (QLC) devices, or any other memory capable of storing more than one bit per memory cell) may be less reliable than memory devices including single-level cells (SLCs) if programmed at extreme temperatures, for example, due to smaller differences in voltage thresholds bounding the different states of the memory cells storing more than one bit per cell.

Systems, devices, and techniques are described to provide an interface between a host system and a memory system that supports refreshing non-volatile memory in a memory device after an automotive system powers down. Refreshing the non-volatile memory after the automotive system powers down may mitigate the negative effects of programming the non-volatile memory at extreme temperatures (e.g., temperatures above a threshold temperature for the memory device). For example, a host system may include a host system controller which may be configured to support operating in a low power mode. In the low power mode, the host system controller may send refresh commands to the memory system while the automotive system is powered down (e.g., in a parked mode), providing the memory system a means of refreshing a memory device—including memory cells programmed at extreme temperatures—as the automotive system temperature relaxes towards a nominal temperature. In some examples, the memory system may transmit one or more refresh capabilities to the host system to support operation of the low power mode. The host system controller may use such refresh capabilities to determine whether to transmit a refresh command to the memory system. In some examples, the host system controller may maintain the memory system in a power on state after the vehicle powers down until the host system controller sends a refresh command to the memory system. Subsequent to the memory system performing the refresh operation, the host system controller may transmit a command to power down the memory system. In some other examples, the host system controller may power the memory system off until the host system controller determines to send a refresh command to the memory system. In such examples, to refresh the memory system, the host system controller may activate the memory system in a low power mode, and the memory system may be configured to refresh one or more memory cells in the low power mode. Configuring a host system and a memory system with the low power mode supporting non-volatile memory refresh operations may result in higher data retention at the memory system and improved reliability of access operations, among other enhancements to cross temperature behavior of the host system, the memory system, or both.

Features of the disclosure are initially described in the context of systems and devices with reference to FIGS. 1 through 3 . Features of the disclosure are further described in the context of a process flow, apparatus diagrams, and flowcharts that relate to an interface for refreshing non-volatile memory with reference to FIGS. 4 through 10 .

FIG. 1 illustrates an example of a system 100 that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein. The system 100 includes a host system 105 coupled with a memory system 110.

A memory system 110 may be or include any device or collection of devices, where the device or collection of devices includes at least one memory array. For example, a memory system 110 may be or include a Universal Flash Storage (UFS) device, an embedded Multi-Media Controller (eMMC) device, a flash device, a universal serial bus (USB) flash device, a secure digital (SD) card, a solid-state drive (SSD), a hard disk drive (HDD), a dual in-line memory module (DIMM), a small outline DIMM (SO-DIMM), or a non-volatile DIMM (NVDIMM), among other possibilities.

The system 100 may be included in a computing device such as a desktop computer, a laptop computer, a network server, a mobile device, a vehicle (e.g., airplane, drone, train, automobile, or other conveyance), an Internet of Things (IoT) enabled device, an embedded computer (e.g., one included in a vehicle, industrial equipment, or a networked commercial device), or any other computing device that includes memory and a processing device.

The system 100 may include a host system 105, which may be coupled with the memory system 110. In some examples, this coupling may include an interface with a host system controller 106, which may be an example of a controller or control component configured to cause the host system 105 to perform various operations in accordance with examples as described herein. The host system 105 may include one or more devices, and in some cases may include a processor chipset and a software stack executed by the processor chipset. For example, the host system 105 may include an application configured for communicating with the memory system 110 or a device therein. The processor chipset may include one or more cores, one or more caches (e.g., memory local to or included in the host system 105), a memory controller (e.g., NVDIMM controller), and a storage protocol controller (e.g., peripheral component interconnect express (PCIe) controller, serial advanced technology attachment (SATA) controller). The host system 105 may use the memory system 110, for example, to write data to the memory system 110 and read data from the memory system 110. Although one memory system 110 is shown in FIG. 1 , the host system 105 may be coupled with any quantity of memory systems 110.

The host system 105 may be coupled with the memory system 110 via at least one physical host interface. The host system 105 and the memory system 110 may in some cases be configured to communicate via a physical host interface using an associated protocol (e.g., to exchange or otherwise communicate control, address, data, and other signals between the memory system 110 and the host system 105). Examples of a physical host interface may include, but are not limited to, a SATA interface, a UFS interface, an eMMC interface, a PCIe interface, a USB interface, a Fiber Channel interface, a Small Computer System Interface (SCSI), a Serial Attached SCSI (SAS), a Double Data Rate (DDR) interface, a DIMM interface (e.g., DIMM socket interface that supports DDR), an Open NAND Flash Interface (ONFI), and a Low Power Double Data Rate (LPDDR) interface. In some examples, one or more such interfaces may be included in or otherwise supported between a host system controller 106 of the host system 105 and a memory system controller 115 of the memory system 110. In some examples, the host system 105 may be coupled with the memory system 110 (e.g., the host system controller 106 may be coupled with the memory system controller 115) via a respective physical host interface for each memory device 130 included in the memory system 110, or via a respective physical host interface for each type of memory device 130 included in the memory system 110.

The memory system 110 may include a memory system controller 115 and one or more memory devices 130. A memory device 130 may include one or more memory arrays of any type of memory cells (e.g., non-volatile memory cells, volatile memory cells, or any combination thereof). Although two memory devices 130-a and 130-b are shown in the example of FIG. 1 , the memory system 110 may include any quantity of memory devices 130. Further, if the memory system 110 includes more than one memory device 130, different memory devices 130 within the memory system 110 may include the same or different types of memory cells.

The memory system controller 115 may be coupled with and communicate with the host system 105 (e.g., via the physical host interface) and may be an example of a controller or control component configured to cause the memory system 110 to perform various operations in accordance with examples as described herein. The memory system controller 115 may also be coupled with and communicate with memory devices 130 to perform operations such as reading data, writing data, erasing data, or refreshing data at a memory device 130—among other such operations—which may generically be referred to as access operations. In some cases, the memory system controller 115 may receive commands from the host system 105 and communicate with one or more memory devices 130 to execute such commands (e.g., at memory arrays within the one or more memory devices 130). For example, the memory system controller 115 may receive commands or operations from the host system 105 and may convert the commands or operations into instructions or appropriate commands to achieve the desired access of the memory devices 130. In some cases, the memory system controller 115 may exchange data with the host system 105 and with one or more memory devices 130 (e.g., in response to or otherwise in association with commands from the host system 105). For example, the memory system controller 115 may convert responses (e.g., data packets or other signals) associated with the memory devices 130 into corresponding signals for the host system 105.

The memory system controller 115 may be configured for other operations associated with the memory devices 130. For example, the memory system controller 115 may execute or manage operations such as wear-leveling operations, garbage collection operations, error control operations such as error-detecting operations or error-correcting operations, encryption operations, caching operations, media management operations, background refresh, health monitoring, and address translations between logical addresses (e.g., logical block addresses (LBAs)) associated with commands from the host system 105 and physical addresses (e.g., physical block addresses) associated with memory cells within the memory devices 130.

The memory system controller 115 may include hardware such as one or more integrated circuits or discrete components, a buffer memory, or a combination thereof. The hardware may include circuitry with dedicated (e.g., hard-coded) logic to perform the operations ascribed herein to the memory system controller 115. The memory system controller 115 may be or include a microcontroller, special purpose logic circuitry (e.g., a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), a digital signal processor (DSP)), or any other suitable processor or processing circuitry.

The memory system controller 115 may also include a local memory 120. In some cases, the local memory 120 may include read-only memory (ROM) or other memory that may store operating code (e.g., executable instructions) executable by the memory system controller 115 to perform functions ascribed herein to the memory system controller 115. In some cases, the local memory 120 may additionally or alternatively include static random access memory (SRAM) or other memory that may be used by the memory system controller 115 for internal storage or calculations, for example, related to the functions ascribed herein to the memory system controller 115. Additionally or alternatively, the local memory 120 may serve as a cache for the memory system controller 115. For example, data may be stored in the local memory 120 if read from or written to a memory device 130, and the data may be available within the local memory 120 for subsequent retrieval for or manipulation (e.g., updating) by the host system 105 (e.g., with reduced latency relative to a memory device 130) in accordance with a cache policy.

Although the example of the memory system 110 in FIG. 1 has been illustrated as including the memory system controller 115, in some cases, a memory system 110 may not include a memory system controller 115. For example, the memory system 110 may additionally or alternatively rely upon an external controller (e.g., implemented by the host system 105) or one or more local controllers 135, which may be internal to memory devices 130, respectively, to perform the functions ascribed herein to the memory system controller 115. In general, one or more functions ascribed herein to the memory system controller 115 may in some cases instead be performed by the host system 105, a local controller 135, or any combination thereof. In some cases, a memory device 130 that is managed at least in part by a memory system controller 115 may be referred to as a managed memory device. An example of a managed memory device is a managed NAND (MNAND) device.

A memory device 130 may include one or more arrays of non-volatile memory cells. For example, a memory device 130 may include NAND (e.g., NAND flash) memory, ROM, phase change memory (PCM), self-selecting memory, other chalcogenide-based memories, ferroelectric random access memory (RAM) (FeRAM), magneto RAM (MRAM), NOR (e.g., NOR flash) memory, Spin Transfer Torque (STT)-MRAM, conductive bridging RAM (CBRAM), resistive random access memory (RRAM), oxide-based RRAM (OxRAM), electrically erasable programmable ROM (EEPROM), or any combination thereof.

Additionally or alternatively, a memory device 130 may include one or more arrays of volatile memory cells. For example, a memory device 130 may include RAM memory cells, such as dynamic RAM (DRAM) memory cells and synchronous DRAM (SDRAM) memory cells.

In some examples, a memory device 130 may include (e.g., on a same die or within a same package) a local controller 135, which may execute operations on one or more memory cells of the respective memory device 130. A local controller 135 may operate in conjunction with a memory system controller 115 or may perform one or more functions ascribed herein to the memory system controller 115. For example, as illustrated in FIG. 1 , a memory device 130-a may include a local controller 135-a and a memory device 130-b may include a local controller 135-b.

In some cases, a memory device 130 may be or include a NAND device (e.g., NAND flash device). A memory device 130 may be or include a memory die 160. For example, in some cases, a memory device 130 may be a package that includes one or more dies 160. A die 160 may, in some examples, be a piece of electronics-grade semiconductor cut from a wafer (e.g., a silicon die cut from a silicon wafer). Each die 160 may include one or more planes 165, and each plane 165 may include a respective set of blocks 170, where each block 170 may include a respective set of pages 175, and each page 175 may include a set of memory cells.

In some cases, a NAND memory device 130 may include memory cells configured to each store one bit of information, which may be referred to as SLCs. Additionally or alternatively, a NAND memory device 130 may include memory cells configured to each store multiple bits of information, which may be referred to as MLCs if configured to each store two bits of information, as TLCs if configured to each store three bits of information, as QLCs if configured to each store four bits of information, or more generically as multiple-level memory cells. Multiple-level memory cells may provide greater density of storage relative to SLC memory cells but may, in some cases, involve narrower read or write margins or greater complexities for supporting circuitry. For example, such narrow read or write margins may be relatively susceptible to temperature fluctuations. That is, the cross temperature behavior for multiple-level memory cells, in some cases, may be relatively poor as compared to SLC memory cells.

In some cases, planes 165 may refer to groups of blocks 170, and in some cases, concurrent operations may take place within different planes 165. For example, concurrent operations may be performed on memory cells within different blocks 170 so long as the different blocks 170 are in different planes 165. In some cases, an individual block 170 may be referred to as a physical block, and a virtual block 180 may refer to a group of blocks 170 within which concurrent operations may occur. For example, concurrent operations may be performed on blocks 170-a, 170-b, 170-c, and 170-d that are within planes 165-a, 165-b, 165-c, and 165-d, respectively, and blocks 170-a, 170-b, 170-c, and 170-d may be collectively referred to as a virtual block 180. In some cases, a virtual block may include blocks 170 from different memory devices 130 (e.g., including blocks in one or more planes of memory device 130-a and memory device 130-b). In some cases, the blocks 170 within a virtual block may have the same block address within their respective planes 165 (e.g., block 170-a may be “block 0” of plane 165-a, block 170-b may be “block 0” of plane 165-b, and so on). In some cases, performing concurrent operations in different planes 165 may be subject to one or more restrictions, such as concurrent operations being performed on memory cells within different pages 175 that have the same page address within their respective planes 165 (e.g., related to command decoding, page address decoding circuitry, or other circuitry being shared across planes 165).

In some cases, a block 170 may include memory cells organized into rows (pages 175) and columns (e.g., strings, not shown). For example, memory cells in a same page 175 may share (e.g., be coupled with) a common word line, and memory cells in a same string may share (e.g., be coupled with) a common digit line (which may alternatively be referred to as a bit line).

For some NAND architectures, memory cells may be read and programmed (e.g., written) at a first level of granularity (e.g., at the page level of granularity) but may be erased at a second level of granularity (e.g., at the block level of granularity). That is, a page 175 may be the smallest unit of memory (e.g., set of memory cells) that may be independently programmed or read (e.g., programed or read concurrently as part of a single program or read operation), and a block 170 may be the smallest unit of memory (e.g., set of memory cells) that may be independently erased (e.g., erased concurrently as part of a single erase operation). Further, in some cases, NAND memory cells may be erased before they can be re-written with new data. Thus, for example, a used page 175 may in some cases not be updated until the entire block 170 that includes the page 175 has been erased.

In some cases, to update some data within a block 170 while retaining other data within the block 170, the memory device 130 may copy the data to be retained to a new block 170 and write the updated data to one or more remaining pages of the new block 170. The memory device 130 (e.g., the local controller 135) or the memory system controller 115 may mark or otherwise designate the data that remains in the old block 170 as invalid or obsolete and may update a logical-to-physical (L2P) mapping table to associate the logical address (e.g., LBA) for the data with the new, valid block 170 rather than the old, invalid block 170. In some cases, such copying and remapping may be performed instead of erasing and rewriting the entire old block 170 due to latency or wearout considerations, for example. In some cases, one or more copies of an L2P mapping table may be stored within the memory cells of the memory device 130 (e.g., within one or more blocks 170 or planes 165) for use (e.g., reference and updating) by the local controller 135 or memory system controller 115.

The system 100 may include any quantity of non-transitory computer readable media that support an interface for refreshing non-volatile memory of a memory device of a vehicle after parking. For example, the host system 105, the memory system controller 115, or a memory device 130 may include or otherwise may access one or more non-transitory computer readable media storing instructions (e.g., firmware) for performing the functions ascribed herein to the host system 105, memory system controller 115, or memory device 130. For example, such instructions, if executed by the host system 105 (e.g., by the host system controller 106), by the memory system controller 115, or by a memory device 130 (e.g., by a local controller 135), may cause the host system 105, memory system controller 115, or memory device 130 to perform one or more associated functions as described herein.

In some cases, a memory system 110 may utilize a memory system controller 115 to provide a managed memory system that may include, for example, one or more memory arrays and related circuitry combined with a local (e.g., on-die or in-package) controller (e.g., local controller 135). An example of a managed memory system is an MNAND system.

In some cases, the memory system 110 may include a memory device 130 designed or configured to operate in a range of ambient temperatures. In some cases, operating the memory device 130 at various temperatures may result in varying operating characteristics of the memory device 130. In some cases, one or more blocks 170 of the memory device 130 may be programmed at extreme temperatures (e.g., temperatures above or below a threshold range of temperatures, such as a nominal temperature range), for example, while an automotive system is powered on. However, the memory system 110 may fail to read the blocks 170 due to a difference in operating characteristics at a programming temperature and a read temperature. For example, the memory system 110 may fail to read data if the memory system 110 programmed the data to a block 170 at a first temperature above a threshold temperature but reads the data at a second temperature below the threshold temperature. Additionally or alternatively, the memory system 110 may fail to retain data programmed at extreme temperatures for relatively long periods of time (e.g., greater than a threshold duration).

In some cases, memory devices 130 including memory cells configured to store more than one bit per memory cell (e.g., MLC devices, TLC devices, QLC devices, or any other memory devices 130 or portions of memory devices 130 capable of storing more than one bit per memory cell) may be relatively more affected by extreme temperatures than SLC devices, for example, due to smaller differences in voltage thresholds bounding the different states of the memory cells.

In some examples, the host system 105 and the memory system 110 may support an interface for refreshing non-volatile memory in a memory device 130 after an automotive system powers down. For example, the host system 105 may include a host system controller 106 which may be configured to use a low power mode. In the low power mode, the host system controller 106 may send refresh commands to the memory system 110 while the automotive system is powered down, providing the memory system 110 a means for refreshing a memory device 130 (e.g., including memory cells programmed at extreme temperatures) while the automotive system is powered down and a temperature associated with the automotive system (e.g., a temperature related to the engine temperature for the vehicle) relaxes towards a nominal temperature. Configuring a host system 105 and a memory system 110 with the low power mode supporting non-volatile memory refresh operations during a vehicle off state may result in higher data retention at the memory system 110 and improved reliability associated with access operations, among other enhancements to cross temperature behavior of the host system 105, the memory system 110, or both.

FIG. 2 illustrates an example of a system 200 that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein. The system 200 may be an example of a system 100 as described with reference to FIG. 1 or aspects thereof. The system 200 may include a memory system 210 configured to store data received from the host system 205 and to send data to the host system 205, if requested by the host system 205 using access commands (e.g., read commands or write commands). The system 200 may implement aspects of the system 100 as described with reference to FIG. 1 . For example, the memory system 210 and the host system 205 may be examples of the memory system 110 and the host system 105, respectively.

The memory system 210 may include memory devices 240 to store data transferred between the memory system 210 and the host system 205, e.g., in response to receiving access commands from the host system 205, as described herein. The memory devices 240 may include one or more memory devices as described with reference to FIG. 1 . For example, the memory devices 240 may include NAND memory, MNAND memory, PCM, self-selecting memory, 3D cross point, other chalcogenide-based memories, FERAM, MRAM, NOR (e.g., NOR flash) memory, STT-MRAM, CBRAM, RRAM, or OxRAM.

The memory system 210 may include a storage controller 230 for controlling the passing of data directly to and from the memory devices 240, e.g., for storing data, retrieving data, and determining memory locations in which to store data and from which to retrieve data. The storage controller 230 may communicate with memory devices 240 directly or via a bus (not shown) using a protocol specific to each type of memory device 240. In some cases, a single storage controller 230 may be used to control multiple memory devices 240 of the same or different types. In some cases, the memory system 210 may include multiple storage controllers 230, e.g., a different storage controller 230 for each type of memory device 240. In some cases, a storage controller 230 may implement aspects of a local controller 135 as described with reference to FIG. 1 .

The memory system 210 may additionally include an interface 220 for communication with the host system 205 and a buffer 225 for temporary storage of data being transferred between the host system 205 and the memory devices 240. The interface 220, buffer 225, and storage controller 230 may be for translating data between the host system 205 and the memory devices 240, e.g., as shown by a data path 250, and may be collectively referred to as data path components.

Using the buffer 225 to temporarily store data during transfers may allow data to be buffered as commands are being processed, thereby reducing latency between commands and allowing arbitrary data sizes associated with commands. This may also allow bursts of commands to be handled, and the buffered data may be stored or transmitted (or both) once a burst has stopped. The buffer 225 may include relatively fast memory (e.g., some types of volatile memory, such as SRAM or DRAM) or hardware accelerators or both to allow fast storage and retrieval of data to and from the buffer 225. The buffer 225 may include data path switching components for bi-directional data transfer between the buffer 225 and other components.

The temporary storage of data within a buffer 225 may refer to the storage of data in the buffer 225 during the execution of access commands. That is, upon completion of an access command, the associated data may no longer be maintained in the buffer 225 (e.g., may be overwritten with data for additional access commands). In addition, the buffer 225 may be a non-cache buffer. That is, data may not be read directly from the buffer 225 by the host system 205. For example, read commands may be added to a queue without an operation to match the address to addresses already in the buffer 225 (e.g., without a cache address match or lookup operation).

The memory system 210 may additionally include a memory system controller 215 for executing the commands received from the host system 205 and controlling the data path components in the moving of the data. The memory system controller 215 may be an example of the memory system controller 115 as described with reference to FIG. 1 . A bus 235 may be used to communicate between the system components.

In some cases, one or more queues (e.g., a command queue 260, a buffer queue 265, and a storage queue 270) may be used to control the processing of the access commands and the movement of the corresponding data. This may be beneficial, e.g., if more than one access command from the host system 205 is processed concurrently by the memory system 210. The command queue 260, buffer queue 265, and storage queue 270 are depicted at the interface 220, memory system controller 215, and storage controller 230, respectively, as examples of a possible implementation. However, queues, if used, may be positioned anywhere within the memory system 210.

Data transferred between the host system 205 and the memory devices 240 may take a different path in the memory system 210 than non-data information (e.g., commands, status information). For example, the system components in the memory system 210 may communicate with each other using a bus 235, while the data may use the data path 250 through the data path components instead of the bus 235. The memory system controller 215 may control how and if data is transferred between the host system 205 and the memory devices 240 by communicating with the data path components over the bus 235 (e.g., using a protocol specific to the memory system 210).

If a host system 205 transmits access commands to the memory system 210, the commands may be received by the interface 220, e.g., according to a protocol (e.g., a UFS protocol or an eMMC protocol). Thus, the interface 220 may be considered a front end of the memory system 210. Upon receipt of each access command, the interface 220 may communicate the command to the memory system controller 215, e.g., via the bus 235. In some cases, each command may be added to a command queue 260 by the interface 220 to communicate the command to the memory system controller 215.

The memory system controller 215 may determine that an access command has been received from the interface 220. In some cases, the memory system controller 215 may determine the access command has been received by retrieving the command from the command queue 260. The command may be removed from the command queue 260 after it has been retrieved therefrom, e.g., by the memory system controller 215. In some cases, the memory system controller 215 may cause the interface 220, e.g., via the bus 235, to remove the command from the command queue 260.

Upon the determination that an access command has been received, the memory system controller 215 may execute the access command. For a read command, this may mean obtaining data from the memory devices 240 and transmitting the data to the host system 205. For a write command, this may mean receiving data from the host system 205 and moving the data to the memory devices 240.

In either case, the memory system controller 215 may use the buffer 225 for, among other things, temporary storage of the data being received from or sent to the host system 205. The buffer 225 may be considered a middle end of the memory system 210. In some cases, buffer address management (e.g., pointers to address locations in the buffer 225) may be performed by hardware (e.g., dedicated circuits) in the interface 220, buffer 225, or storage controller 230.

To process a write command received from the host system 205, the memory system controller 215 may first determine if the buffer 225 has sufficient available space to store the data associated with the command. For example, the memory system controller 215 may determine, e.g., via firmware (e.g., controller firmware), an amount of space within the buffer 225 that may be available to store data associated with the write command.

In some cases, a buffer queue 265 may be used to control a flow of commands associated with data stored in the buffer 225, including write commands. The buffer queue 265 may include the access commands associated with data currently stored in the buffer 225. In some cases, the commands in the command queue 260 may be moved to the buffer queue 265 by the memory system controller 215 and may remain in the buffer queue 265 while the associated data is stored in the buffer 225. In some cases, each command in the buffer queue 265 may be associated with an address at the buffer 225. That is, pointers may be maintained that indicate where in the buffer 225 the data associated with each command is stored. Using the buffer queue 265, multiple access commands may be received sequentially from the host system 205 and at least portions of the access commands may be processed concurrently.

If the buffer 225 has sufficient space to store the write data, the memory system controller 215 may cause the interface 220 to transmit an indication of availability to the host system 205 (e.g., a “ready to transfer” indication), e.g., according to a protocol (e.g., a UFS protocol or an eMMC protocol). As the interface 220 subsequently receives from the host system 205 the data associated with the write command, the interface 220 may transfer the data to the buffer 225 for temporary storage using the data path 250. In some cases, the interface 220 may obtain from the buffer 225 or buffer queue 265 the location within the buffer 225 to store the data. The interface 220 may indicate to the memory system controller 215, e.g., via the bus 235, if the data transfer to the buffer 225 has been completed.

Once the write data has been stored in the buffer 225 by the interface 220, the data may be transferred out of the buffer 225 and stored in a memory device 240. This may be done using the storage controller 230. For example, the memory system controller 215 may cause the storage controller 230 to retrieve the data out of the buffer 225 using the data path 250 and transfer the data to a memory device 240. The storage controller 230 may be considered a back end of the memory system 210. The storage controller 230 may indicate to the memory system controller 215, e.g., via the bus 235, that the data transfer to a memory device of the memory devices 240 has been completed.

In some cases, a storage queue 270 may be used to aid with the transfer of write data. For example, the memory system controller 215 may push (e.g., via the bus 235) write commands from the buffer queue 265 to the storage queue 270 for processing. The storage queue 270 may include entries for each access command. In some examples, the storage queue 270 may additionally include a buffer pointer (e.g., an address) that may indicate where in the buffer 225 the data associated with the command is stored and a storage pointer (e.g., an address) that may indicate the location in the memory devices 240 associated with the data. In some cases, the storage controller 230 may obtain from the buffer 225, buffer queue 265, or storage queue 270 the location within the buffer 225 from which to obtain the data. The storage controller 230 may manage the locations within the memory devices 240 to store the data (e.g., performing wear-leveling, garbage collection, and the like). The entries may be added to the storage queue 270, e.g., by the memory system controller 215. The entries may be removed from the storage queue 270, e.g., by the storage controller 230 or memory system controller 215 upon completion of the transfer of the data.

To process a read command received from the host system 205, the memory system controller 215 may again first determine if the buffer 225 has sufficient available space to store the data associated with the command. For example, the memory system controller 215 may determine, e.g., via firmware (e.g., controller firmware), an amount of space within the buffer 225 that may be available to store data associated with the read command.

In some cases, the buffer queue 265 may be used to aid with buffer storage of data associated with read commands in a similar manner as discussed above with respect to write commands. For example, if the buffer 225 has sufficient space to store the read data, the memory system controller 215 may cause the storage controller 230 to retrieve the data associated with the read command from a memory device 240 and store the data in the buffer 225 for temporary storage using the data path 250. The storage controller 230 may indicate to the memory system controller 215, e.g., via the bus 235, upon complete data transfer to the buffer 225.

In some cases, the storage queue 270 may be used to aid with the transfer of read data. For example, the memory system controller 215 may push the read command to the storage queue 270 for processing. In some cases, the storage controller 230 may obtain from the buffer 225 or storage queue 270 the location within the memory devices 240 from which to retrieve the data. In some cases, the storage controller 230 may obtain from the buffer queue 265 the location within the buffer 225 to store the data. In some cases, the storage controller 230 may obtain from the storage queue 270 the location within the buffer 225 to store the data. In some cases, the memory system controller 215 may move the command processed by the storage queue 270 back to the command queue 260.

Once the data has been stored in the buffer 225 by the storage controller 230, the data may be transferred out of the buffer 225 and sent to the host system 205. For example, the memory system controller 215 may cause the interface 220 to retrieve the data out of the buffer 225 using the data path 250 and transmit the data to the host system 205, e.g., according to a protocol (e.g., a UFS protocol or an eMMC protocol). For example, the interface 220 may process the command from the command queue 260 and may indicate to the memory system controller 215, e.g., via the bus 235, that the data transmission to the host system 205 has been completed.

The memory system controller 215 may execute received commands according to an order (e.g., a first-in, first-out order, according to the order of the command queue 260). For each command, the memory system controller 215 may cause data corresponding to the command to be moved into and out of the buffer 225, as discussed above. As the data is moved into and stored within the buffer 225, the command may remain in the buffer queue 265. A command may be removed from the buffer queue 265, e.g., by the memory system controller 215, if the processing of the command has been completed (e.g., if data corresponding to the access command has been transferred out of the buffer 225). If a command is removed from the buffer queue 265, the address previously storing the data associated with that command may be available to store data associated with a new command.

The memory system controller 215 may additionally be configured for operations associated with the memory devices 240. For example, the memory system controller 215 may execute or manage operations such as wear-leveling operations, garbage collection operations, error control operations such as error-detecting operations or error-correcting operations, encryption operations, caching operations, media management operations, background refresh, health monitoring, and address translations between logical addresses (e.g., LBAs) associated with commands from the host system 205 and physical addresses (e.g., physical block addresses) associated with memory cells within the memory devices 240. That is, the host system 205 may issue commands indicating one or more LBAs and the memory system controller 215 may identify one or more physical block addresses indicated by the LBAs. In some cases, one or more contiguous LBAs may correspond to noncontiguous physical block addresses. In some cases, the storage controller 230 may be configured to perform one or more of the above operations in conjunction with or instead of the memory system controller 215. In some cases, the memory system controller 215 may perform the functions of the storage controller 230 and the storage controller 230 may be omitted.

In some examples, the memory system 210 may be additionally configured to support an interface for refreshing a memory device 240, for example, providing additional functionality for an automotive system (e.g., a vehicle including the host system 205 and the memory system 210) in a power down state. For example, if the automotive system is in a power down state, the memory system 210 may receive a refresh command from the host system 205 to perform one or more refresh operations on the memory cells of a memory device 240. In some cases, the memory system 210 may transmit an indication of a refresh capability of the memory system 210 to the host system 205. The refresh capability may include one or more parameters that may be used by the host system 205 to determine whether to initiate a refresh operation for the memory system 210. For example, the refresh capability may include a duration for performing a refresh operation at the memory system 210, a threshold temperature for programming data to the memory system 210, a target temperature range for programming data to the memory system 210, a data retention capability of the memory system 210, cross-temperature handling information for the memory system 210, a quantity of memory cell levels for the memory system 210, or a combination thereof. In some examples, the refresh operations associated with the refresh command may be directed towards (or may otherwise correspond to) memory cells of the memory device 240 that were programmed at extreme temperatures (e.g., temperatures above a threshold temperature or temperatures below a threshold temperature), as compared to a nominal temperature range of the memory device 240. For example, if the automotive system is in a power on state, the memory system 210 may program one or more memory cells of the memory device 240 while subject to relatively high temperatures (e.g., due to ambient heat from an engine of the automotive system, or due to any other heat source causing extreme temperatures at the memory device 240), as compared to a configured temperature range (e.g., nominal temperature range) of the memory device 240.

To support such refresh operations, the memory system 210 may be configured to track memory cells that were programmed at extreme temperatures (e.g., above a threshold temperature, or otherwise outside a threshold temperature range). As such, the memory system 210 may store a list of blocks 275 which the memory system 210 may use to record which blocks of the memory device 240 include memory cells programmed at extreme temperatures. By way of example, the memory system 210 may identify one or more blocks of the memory device 240 that satisfy one or more threshold criteria. In some cases, the memory system 210 may add a block identifier for each block (e.g., QLC blocks or other blocks) satisfying the threshold criteria to the list of blocks 275 stored in memory. In some cases, the threshold criteria may include a temperature threshold, such that if a block of the memory device 240 has been programmed at a temperature that satisfies the temperature threshold (e.g., greater than or equal to a first temperature threshold, less than or equal to a second temperature threshold), the memory system 210 may add a block identifier associated with the block to the list of blocks 275. Additionally or alternatively, the threshold criteria may include a threshold quantity of errors, where if the memory system 210 detects a quantity of errors in a block of the memory device 240 that satisfies the threshold quantity of errors (e.g., greater than or equal to the threshold quantity of errors), the memory system 210 may add a block identifier associated with the block to the list of blocks 275. In some cases, the memory system 210 may store the list of blocks 275 in volatile memory of the memory system 210, for example, at local memory of the memory system controller 215 (e.g., in SRAM).

In some examples, a refresh operation at the memory system 210 may be associated with moving data from a first physical address to a different physical address. For example, upon receiving the refresh command, the memory system 210 may read data from one or more memory cells of the memory device 240, such as the data associated with block identifiers in the list of blocks 275, and the memory system 210 may write the data back to a different portion (e.g., a different non-volatile memory resource) or the same portion of the memory device 240. In some examples, the memory system 210 may reprogram such data from a first portion to a second portion of the memory device 240 while a temperature of the memory system 210, the memory device 240, or both satisfies a target temperature range. For example, in response to the automotive system entering a power off mode, the ambient temperature of the memory system 210 may gradually lower (e.g., due to an engine being off, decreased use of a battery, or any other reason for reducing heat from the environment of the memory system 210). As such, the memory system 210 may perform the refresh operation, in response to the refresh command, such that the memory system 210 may reprogram data, previously programmed at an extreme ambient temperature (e.g., above a threshold temperature), at a lower ambient temperature (e.g., a temperature within a nominal temperature range of the memory system 210). In some cases, the memory system 210 may be configured to reprogram the blocks from the list of blocks 275 prior to entering an off state.

In some cases, the memory system 210 may be configured to perform a clean shut down, where the memory system 210 may commit data from volatile memory to non-volatile memory, for example, at the memory device 240. The clean shut down may allow the memory system 210 to persist data initially stored in volatile memory once the memory system 210 loses power by moving the data to non-volatile memory (e.g., which may maintain a programmed state without a power input).

In some examples, the memory system 210 may perform the clean shut down after performing the refresh operation. For example, the host system 205 may operate in a low power mode in response to a vehicle shut down. Prior to powering down the memory system 210, the host system 205 may transmit a refresh command to the memory system 210 to perform one or more refresh operations (e.g., if the ambient temperature for the memory system 210 enters a nominal temperature range). The memory system 210 may receive a power off command from the host system 205 indicating that a power supply to the memory system 210 is to be shut down (e.g., after performing the refresh operation(s)). In response to receiving the power off command, the memory system 210 may identify data stored in volatile memory of the memory system 210 and may program the data to non-volatile memory (e.g., within a memory device 240). The memory system 210 may enter an off state subsequent to (or otherwise in response to) programming the data to the non-volatile memory.

In some other examples, the memory system 210 may perform the clean shut down before performing the refresh operation. For example, the memory system 210 may receive, from the host system 205, a power off command before performing the refresh operation. In some cases, the memory system 210 may operate in a first power mode (e.g., a power mode associated with normal operation) before performing the refresh operation. In response to receiving the power off command, the memory system 210 may identify data stored in volatile memory of the memory system 210 and program the data to non-volatile memory (e.g., within a memory device 240). The memory system 210 may enter an off state subsequent to (or otherwise in response to) programming the data to the non-volatile memory. In some examples, the memory system 210 may store an indication of the list of blocks 275 to refresh in non-volatile memory during the clean shut down. In some cases, the memory system 210 may receive a trigger, from the host system 205, switching the memory system 210 to a second power mode (e.g., a power mode associated with relatively low power consumption as compared to the first power mode). The memory system 210 may switch to the second power mode and, while operating in the second power mode, the memory system 210 may receive a refresh command from the host system 205 to perform one or more refresh operations. Accordingly, the memory system 210 may support both clean shut down procedures and refresh operations while a vehicle including the host system 205 and the memory system 210 is powered down (e.g., in an off state or parked mode).

FIG. 3 illustrates an example of a system 300 that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein. The system 300 may be an example of a system 100, a system 200, or a combination thereof, as described with reference to FIGS. 1 and 2 . The system 300 may include a host system 305 configured to trigger refresh operations at a memory system 310 in response to an automotive system (e.g., a vehicle including system 300) entering a power down mode.

In some examples, the host system 305 may include a host system controller 315 such as host system controller 106 as described with reference to FIG. 1 , an interface 320 for communications with the memory system 310, and a power control 325 coupling components within the host system 305 to a power source 330. The power source 330 may be an example of (or may make use of) a battery within the system 300 or the automotive system. For example, the power source 330 may be a component of the host system 305 or may be external to the host system 305. The interface 320 may communicate commands, data, or both between the host system 305 and the memory system 310. The memory system 310 may program data to one or more memory devices 350 or read data from one or more memory devices 350 in response to access commands received from the host system 305. The host system 305 may include a bus 335 with which the components within the host system 305 may communicate. Additionally or alternatively, the power source 330 may provide power to one or more other components according to commands or instructions from the power control 325. For example, the power source 330 may provide power to the host system controller 315, the interface 320, the memory system 310, or any combination thereof (e.g., using connections 340).

The host system 305 may receive an indication that the automotive system is powering down (e.g., turning an engine off, switching a battery from a high power state to a low power state, or any other means of powering down a vehicle). In some such examples, the host system 305 may be configured to support a mode of operation associated with refreshing memory cells (e.g., memory cells programmed at extreme temperatures outside a nominal temperature range) at one or more memory devices 350 of the memory system 310. For example, in response to receiving the indication that the automotive system is powering down, the host system 305 may switch from a first mode of operation (e.g., a high power or normal operating mode such as an operating mode associated with the vehicle powered on) corresponding to a first power usage to a second mode of operation (e.g., a low power or parked operating mode such as an operating mode associated with the vehicle powered down) corresponding to a second power usage. The second power usage may be less than (e.g., may consume less energy than) the first power usage.

In some cases, operating in the first mode of operation may be associated with relatively high ambient operating temperatures (or associated with a relatively wide range of ambient operating temperatures, including relatively high ambient operating temperatures). For example, the first mode of operation may correspond to the automotive system being in a power on state and, as such, the temperature of the environment proximal to the system 300 may be relatively high due to running an engine of the vehicle relatively near the system 300. For example, the system 300 may experience an extremely high temperature (e.g., a temperature value greater than a nominal temperature range of the system 300) if operating in the first mode of operation. Switching to the second mode of operation may be in response to the vehicle powering down and, correspondingly, may be associated with the ambient temperature proximal to the system 300 decreasing, in some cases to a nominal operating temperature of the system 300. The nominal operating temperature may correspond to a range of temperatures at which the system 300 may program data reliably with negligible cross-temperature effects at the other temperatures within the range.

After the automotive system powers off, the ambient temperature may decrease due to one or more heat sources (e.g., an engine, a battery) turning off or entering a low power state. As such, the host system 305 may switch to the second mode of operation, in which the host system 305 may transmit a refresh command to the memory system 310, for example, upon determining that the memory cells of one or more memory devices 350 of the memory system 310 are to be refreshed (e.g., in response to the automotive system lowering in temperature). In some examples, the host system 305 may be configured to control a voltage supplied to the memory system 310 in accordance with operating in the second mode of operation. That is, the host system 305 (e.g., using power control 325) may restrict, provide, or otherwise limit power supplied to the memory system 310 from the power source 330 based on (e.g., in response to) operating in the second operating mode.

In some examples, the host system 305 may determine whether to transmit a refresh command using one or more refresh capabilities of the memory system 310. For example, a refresh capability may indicate a timing for performing a refresh operation, and— in some cases—the timing may correspond to a time period during which the vehicle associated with the system 300 is powered down. The host system 305 may use the second mode of operation to satisfy the one or more refresh capabilities of the memory system 310 if the vehicle is in a powered down state. In some cases, the host system 305 may receive the one or more refresh capabilities from the memory system 310. For example, the host system 305 may transmit a boot command to the memory system 310, and the memory system 310 may provide one or more refresh capabilities in response to the boot command. The boot command may indicate a boot procedure for the memory system 310, where the boot procedure may be associated with a handshake procedure in response to the host system 305 activating (or otherwise making use of) the interface 320 between the memory system 310 and the host system 305. In some cases, in performing the boot procedure, the memory system 310 may transmit the one or more refresh capabilities to the host system 305.

The host system 305 may receive, from the memory system 310, an indication of a refresh capability of the memory system 310. In some cases, the refresh capability may include a duration for performing a refresh operation at the memory system 310 (e.g., how often memory may be refreshed). The host system 305 may determine whether to transmit the refresh command in response to comparing an elapsed time from the automotive system powering off or from the previous refresh operation for the memory system 310 to the duration for performing the refresh operation. In some cases, the refresh capability may include a threshold temperature or temperature range, and the host system 305 may determine to transmit the refresh command in response to an ambient temperature satisfying the threshold temperature or temperature range. In yet some other cases, the refresh capability may include a data retention capability of the memory system 310, and the host system 305 may transmit the refresh command in accordance with the data retention capability. For example, if the memory system 310 has a relatively low data retention capability (the memory system 310 fails to retain data, especially data stored at extreme temperatures, after a relatively short time duration), the host system 305 may transmit the refresh command to the memory system 310 at an earlier time than if the memory system 310 were to have a relatively high data retention capability. In some cases, the refresh capability may include cross-temperature handling information for the memory system 310, and the host system 305 may transmit the refresh command in response to comparing an ambient temperature to the cross-temperature handling information. For example, if the cross-temperature handling information indicates that data is programmed at memory cells of a memory device 350 at an extreme temperature with negative cross-temperature effects (e.g., a temperature above a threshold temperature), the host system 305 may determine to transmit the refresh command to the memory system 310. In some cases, the refresh capability may include an indication of the quantity of memory cell levels for a memory device 350, and the host system 305 may transmit the refresh command in response to the quantity of memory cell levels. For example, the refresh capability may include an indication that a memory device 350 includes one or more QLC memory cells, and the refresh command may configure the memory system 310 to reprogram data from one or more blocks of the QLC memory cells to one or more different blocks (e.g., due to a relatively faster degradation of the reliability of a QLC programmed at an extreme temperature than for an SLC programmed at an extreme temperature). In some cases, the host system 305 may use machine learning techniques, heuristics, or other techniques to determine one or more refresh criteria for the memory system 310 using inputs such as environmental factors, temperature transitions, temperature thresholds, real time clock (RTC) inputs, event logs, an operational lifetime, driver usage historical data, or any combination thereof.

In some examples, the host system 305 may transmit the refresh command in response to determining whether a threshold time (e.g., as indicated by a refresh capability) has passed. For example, after the automotive system powers down, the host system 305 may track a time elapsed from the automotive system powering down. The host system 305 may use an RTC or another method of tracking time to determine whether the threshold time has elapsed. If the time elapsed satisfies (e.g., equals or surpasses) the threshold time, the host system 305 may determine to transmit the refresh command. In some examples, the host system 305 may determine to transmit the refresh command in response to a first threshold time being satisfied, but before a second threshold time is satisfied, where the second threshold time may be associated with a critical data retention threshold (e.g., a threshold time corresponding to data potentially being lost or unreadable at one or more memory cells).

Additionally or alternatively, the host system 305 may transmit the refresh command in response to determining whether a temperature value satisfies a threshold temperature (e.g., as indicated by a refresh capability). For example, after the automotive system powers down, the host system 305 may detect a temperature value associated with the host system 305, the memory system 310, or both. The host system 305 may use a temperature sensor or may receive an indication of a temperature value from a temperature sensor external to the host system 305. If the temperature value satisfies (e.g., is less than or equal to) the threshold temperature, the host system 305 may determine to transmit the refresh command. For example, the host system 305 may trigger transmission of the refresh command due to the operating temperature for programming data at a memory device 350 falling below the threshold temperature. In some cases, the temperature threshold may include a range of temperature values (e.g., as indicated by a refresh capability), and the host system 305 may determine to transmit the refresh command in response to the temperature value being within the range of temperature values (e.g., within a nominal temperature range).

In some examples, the host system 305 may initiate a clean shut down of the memory system 310 in which the memory system 310 may commit data from volatile memory at the memory system 310, memory devices 350, or both to non-volatile memory, for example, at one or more of the memory devices 350. In some cases, the host system 305 may initiate the clean shut down in response to transmitting the refresh command. For example, once the memory system 310 performs one or more refresh operations in response to the refresh command, the host system 305 may transmit a power off command to the memory system 310, triggering the memory system 310 to perform the clean shut down. In some other cases, the host system 305 may initiate the clean shut down in response to the automotive system powering down (e.g., the vehicle entering a parked mode) prior to performing the refresh operations at the memory system 310. For example, if the host system 305 is in the first power mode, the host system 305 may transmit a power off command to the memory system 310, triggering the memory system 310 to commit data from volatile memory to non-volatile memory at the memory system 310 (e.g., performing a clean shut down). In such an example, the host system 305 may reactivate the memory system 310 to operate in a second power mode (e.g., a power mode associated with low power consumption as compared to a first power mode associated with operations at the memory system 310 corresponding to the automotive system being powered on), and the host system 305 may transmit the refresh command to the memory system 310 due to the memory system 310 being in the second power mode.

In some cases, the automotive system may power up and the host system 305 may receive an indication that the automotive system is powering up (e.g., the vehicle is entering a drive mode). In some such cases, the host system 305 may determine whether the memory system 310 is in an off state based on (e.g., in response to) the indication that the automotive system is powering up and due to the host system 305 operating in the second mode of operation. For example, the host system 305, the memory system 310, or both may be performing operations in the second mode of operation (e.g., a low power mode) as the automotive system powers on. If the host system 305 determines that the memory system 310 is on, the host system 305 may determine whether the memory system 310 is currently performing one or more operations (e.g., refresh operations triggered by a refresh command). The host system 305 may be configured to manage such operations (e.g., the refresh operations) as part of the boot up procedure, such that the memory system 310 completes any current or pending operations. If the host system 305 determines that the memory system 310 is off (e.g., indicating that the memory system 310 performed a clean shut down procedure), the host system 305 may transmit a boot command to the memory system 310, triggering the memory system 310 to switch to an on state.

By supporting the second mode of operation, the host system 305 may support transmission of a refresh command to the memory system 310 during a time period in which the vehicle including the host system 305 and the memory system 310 is powered off. Accordingly, if the vehicle is parked for a long duration (e.g., greater than a threshold time at which memory cells of the memory system 310 may potentially fail to retain their state), the host system 305 may continue to manage the memory system 310 during the duration and refresh data (e.g., one time, periodically, or aperiodically) to support data retention at the memory devices 350 of the memory system 310.

FIG. 4 illustrates an example of a process flow 400 that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein. The operations of the process flow 400 may be implemented by a host system, a memory system, an automotive system, or components thereof as described herein. For example, the operations of the process flow 400 may be performed by a system as described with reference to FIGS. 1 through 3 . A host system may transmit a refresh command to a memory system in response to an automotive system powering down, initiating a refresh operation at a memory device, such that one or more cells programmed at extreme temperatures may be reprogrammed at relatively lower temperatures (e.g., as compared to such extreme temperatures). Alternative examples of the following may be implemented, where some steps are performed in a different order or not at all. Additionally, some steps may include additional features not mentioned below.

Aspects of the process flow 400 may be implemented by a controller, among other components (e.g., a host system controller, a memory system controller such as an MNAND die of a memory device). Additionally or alternatively, aspects of the process flow 400 may be implemented as instructions stored in memory (e.g., firmware stored in a memory coupled with the memory device). For example, the instructions, if executed by a controller (e.g., a host system controller), may cause the controller to perform the operations of the process flow 400.

In some examples, at 405, a refresh capability may be received. For example, a memory system may transmit, to a host system, an indication of a refresh capability of the memory system. The refresh capability may be associated with a refresh operation involving reprogramming data from one or more non-volatile first blocks of the memory system to one or more non-volatile second blocks of the memory system. In some cases, the memory system may transmit the refresh capability to the host system as part of a boot procedure. The refresh capability may pertain to a park mode of a vehicle (e.g., an automotive system including the host system and the memory system).

At 410, a power down indication may be received. For example, the host system may receive an indication that the vehicle (e.g., the automotive system including the host system and the memory system) is powering down. In some examples, the host system (e.g., including a host system controller) may be provided a first voltage from a power source if the vehicle is active. After receiving the power down indication (e.g., determining that the vehicle is powering down from the active state to an off state), the host system may be provided a second voltage from the power source, where the second voltage is less than the first voltage.

In some cases, at 415, a power off command may be transmitted. For example, the host system may receive the indication at 410 and determine to initiate a clean shut down of the memory system as described with reference to FIGS. 2 and 3 in response to the automotive system powering down.

At 420, a first mode may be switched to a second mode. For example, the host system may receive the indication at 410 and may switch from a first mode of operation corresponding to a first power usage to a second mode of operation, where the second mode of operation corresponds to a second power usage by the host system lower than the first power usage. The power usage may correspond to a power overhead at the host system controller, a voltage supplied to the host system controller by a power source, or some combination thereof. The second mode may conserve power at the host system while the vehicle is powered down but may support the host system performing a reduced set of operations (e.g., as compared to the host system operating in the first mode). The reduced set of operations may include at least triggering refresh operations at the memory system.

In some examples, at 425, the memory system may be switched to operate in a second mode. For example, if the host system did not transmit the power off command at 415, the host system may instead switch the memory system to operate in a second power mode associated with a lower power consumption as compared to a first power mode associated with operations at the memory system corresponding to the automotive system being powered on. The second mode may conserve power at the memory system while the vehicle is powered down but may support the memory system performing a reduced set of operations (e.g., as compared to the memory system operating in the first power mode), including at least performing refresh operations.

At 430, a refresh trigger may be monitored. For example, the host system may monitor for a refresh trigger to determine whether to transmit a refresh command to the memory system. The host system may monitor a temperature value (e.g., an ambient temperature), a duration of time, or any other parameter corresponding to triggering a refresh operation at the memory system. In some cases, monitoring for the refresh trigger may not involve additional environmental inputs at the host system. For example, the host system may use information managed at the host system (e.g., a host system temperature sensor, an RTC or other timing component at the host system) to detect a refresh trigger.

At 435, it is determined whether a refresh trigger is satisfied. For example, the host system may determine whether a threshold temperature for triggering a refresh operation is satisfied, a threshold time for triggering a refresh operation is satisfied, or both. In some cases, the host system may determine that the threshold temperature, the threshold time, or both, are not satisfied. As such, the host system may continue monitoring for the refresh trigger at 430. In other cases, the host system may determine that the refresh trigger is satisfied. In some examples, the threshold time may be satisfied. For example, the host system may determine that a threshold time has passed since receiving the indication that the vehicle is powering down, and the host system may initiate a refresh operation based on (e.g., in response to) determining that the threshold time has passed. In some cases, the threshold time may be a first threshold time, and the host system may initiate the refresh operation prior to a second threshold time (e.g., a time associated with potential data loss or data unreadability) being satisfied. In some other examples, the threshold temperature may be satisfied. The host system may detect a temperature value and may determine whether the temperature value satisfies the threshold temperature. In some cases, the threshold temperature may include a range of temperature values and determining whether the temperature value satisfies the threshold temperature may include determining whether the temperature value is within the range of temperature values.

In some cases, at 440, if a refresh trigger is satisfied and the memory system is powered off (e.g., in response to a power off command at 415), the memory system may be switched to operate in a second mode. The second mode may correspond to a relatively low power mode in which the memory system may receive a refresh command and perform one or more refresh operations. In some cases, the host system may transmit a boot command to cause the memory system to enter the second mode.

At 445, if the refresh trigger is satisfied, a refresh command may be transmitted. For example, a refresh command may be issued from the host system controller to the memory system, in some cases, based on (e.g., in accordance with) the second voltage being provided to the host system controller (e.g., the host system operating in the second mode of operation in which the host system is supplied an amount of power that supports transmitting a refresh command to the memory system). The host system may issue refresh commands, power on or off the memory system, or both according to a refresh capability of the memory system, a power budget of a power supply associated with the second mode of operation, or both. As such, the host system may transmit a refresh command to the memory system, initiating a refresh operation at the memory system as described with reference to FIGS. 2 and 3 .

The memory system may perform the refresh operation in response to the refresh command, including reprogramming data from one or more non-volatile first blocks of the memory system to one or more non-volatile second blocks of the memory system. In some examples, the memory system may store a list of non-volatile memory blocks to refresh. For example, the memory system may store the list in volatile memory, such as in SRAM of the memory system controller. The list may include block identifiers for the memory system to refresh in a refresh operation. The memory system may add a block identifier to the list if the corresponding non-volatile memory block is programmed at a temperature (e.g., an extreme temperature) satisfying a threshold temperature, if the corresponding non-volatile memory block has had a quantity of errors satisfying a threshold quantity of errors, or both. For example, such criteria may indicate a non-volatile memory block that may potentially fail to retain stored data. The memory system may use the list to determine which non-volatile memory blocks to refresh during a refresh operation. In some examples, the memory system may program the list of non-volatile memory blocks to non-volatile memory of the memory system prior to entering an off state (e.g., to persist the list).

The memory system may reprogram the data from the one or more first blocks of the memory system to the one or more second blocks of the memory system while a temperature associated with the memory system satisfies a target temperature range (e.g., is within a nominal temperature range). The one or more non-volatile first blocks may be different from the one or more non-volatile second blocks, or the one or more non-volatile first blocks and the one or more non-volatile second blocks may be the same.

In some examples, at 450, a power off command may be transmitted. For example, the host system may determine to initiate a clean shut down operation at the memory system after transmitting the refresh command (e.g., after the refresh operation is completed at the memory system) as described with reference to FIGS. 2 and 3 . The memory system may identify data stored in volatile memory in response to receiving the power off command and may program the data to non-volatile memory of the memory system to support the clean shut down operation. The memory system may enter an off state after programming the data to the non-volatile memory and in response to the power off command.

At 455, a power up indication may be received. For example, the vehicle may power up and, as such, the host system may receive an indication that the vehicle is powering up. The temperature difference between the vehicle turning off and the vehicle turning on may be significant (e.g., greater than a threshold difference). However, due to performing the refresh operation while the vehicle was in the off state, the memory system may mitigate the negative effects of cross-temperature access operations for such a temperature difference due to reprogramming data at one or more temperatures closer to the temperature at vehicle turn on time.

At 460, it is determined whether the memory system is in an off state. In some examples, the host system may determine that the memory system is in an on state in accordance with the host system operating in the second mode of operation (e.g., to perform refresh operations). If the host system determines that the memory system is in an on state, the host system may determine an ongoing operation at the memory system, such as the refresh operation (or any other ongoing operation). At 465, the ongoing operation may be managed. That is, the host system may be configured to support the ongoing operation at the memory system (e.g., transmitting one or more refresh commands) to complete any ongoing or pending operations at the memory system, for example, prior to performing one or more aspects of a boot procedure. In some examples, the host system may determine that the memory system is in an off state and, as such, the host system may turn the memory system on. For example, at 470, a boot command may be transmitted. The host system may transmit the boot command to the memory system in response to the memory system being in an off state and determining to turn the memory system on.

FIG. 5 shows a block diagram 500 of a host system 520 that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein. The host system 520 may be an example of aspects of a host system as described with reference to FIGS. 1 through 4 . The host system 520, or various components thereof, may be an example of means for performing various aspects supporting an interface for refreshing a memory device of a vehicle after parking as described herein. For example, the host system 520 may include a power indication receiver 525, an operation mode manager 530, a refresh command transmitter 535, a refresh capability component 540, a threshold manager 545, a temperature value manager 550, a power command transmitter 555, a boot command transmitter 560, or any combination thereof. Each of these components may communicate, directly or indirectly, with one another (e.g., via one or more buses). The host system 520 may include a controller associated with a memory device, and the host system 520 may be a component of a vehicle.

The power indication receiver 525 may be configured as or otherwise support a means for receiving an indication that the vehicle is powering down. The operation mode manager 530 may be configured as or otherwise support a means for switching, from a first mode of operation corresponding to a first power usage by the host system, to a second mode of operation corresponding to a second power usage by the host system lower than the first power usage, where the switching is based on (e.g., in response to) the indication that the vehicle is powering down. The refresh command transmitter 535 may be configured as or otherwise support a means for transmitting, to a memory system (e.g., including the memory device), a refresh command based on (e.g., in response to) operating according to the second mode of operation.

In some examples, the refresh capability component 540 may be configured as or otherwise support a means for receiving, from the memory system, an indication of a refresh capability of the memory system, where the refresh command is transmitted based on (e.g., using a trigger determined according to) the refresh capability of the memory system.

In some examples, the boot command transmitter 560 may be configured as or otherwise support a means for transmitting, to the memory system, a boot command indicating a boot procedure for the memory system, where the indication of the refresh capability is received in connection with the boot procedure for the memory system.

In some examples, the refresh capability of the memory system includes a threshold duration between refresh operations for the memory system, a duration for performing a refresh operation at the memory system, a threshold temperature for programming data to the memory system, a target temperature range for programming the data to the memory system, a data retention capability of the memory system, cross-temperature handling information for the memory system, a quantity of memory cell levels for the memory system, or any combination thereof.

In some examples, the threshold manager 545 may be configured as or otherwise support a means for determining whether a threshold time has passed since receiving the indication that the vehicle is powering down, where the refresh command is transmitted based on (e.g., in response to) determining that the threshold time has passed.

In some examples, the threshold time may be a first threshold time, and the refresh command may be transmitted prior to a second threshold time passing since receiving the indication that the vehicle is powering down.

In some examples, the temperature value manager 550 may be configured as or otherwise support a means for detecting a temperature value. In some examples, the threshold manager 545 may be configured as or otherwise support a means for determining whether the temperature value satisfies a threshold temperature, where the refresh command may be transmitted based on (e.g., in response to) determining that the temperature value satisfies the threshold temperature.

In some examples, the threshold temperature includes a range of temperature values. In some examples, the temperature value satisfies the threshold temperature based on (e.g., according to) the temperature value being within the range of temperature values.

In some examples, the power command transmitter 555 may be configured as or otherwise support a means for transmitting, after transmitting the refresh command, a power off command to the memory system based on (e.g., in response to) the indication that the vehicle is powering down.

In some examples, the power command transmitter 555 may be configured as or otherwise support a means for transmitting, before transmitting the refresh command, a power off command to the memory system operating in a first power mode based on (e.g., in response to) the indication that the vehicle is powering down. In some examples, the operation mode manager 530 may be configured as or otherwise support a means for activating the memory system to operate in a second power mode associated with lower power consumption by the memory system than the first power mode based on (e.g., in accordance with) operating according to the second mode of operation, where the refresh command is transmitted while the memory system is operating in the second power mode.

In some examples, the power indication receiver 525 may be configured as or otherwise support a means for receiving an indication that the vehicle is powering up. In some examples, the operation mode manager 530 may be configured as or otherwise support a means for determining whether the memory system is in an off state based on (e.g., in response to) the indication that the vehicle is powering up and operating according to the second mode of operation.

In some examples, the operation mode manager 530 may be configured as or otherwise support a means for determining an ongoing operation at the memory system based on (e.g., in response to) determining that the memory system is in an on state. In some examples, the operation mode manager 530 may be configured as or otherwise support a means for managing the ongoing operation at the memory system.

In some examples, the boot command transmitter 560 may be configured as or otherwise support a means for transmitting, to the memory system, a boot command to initiate a boot procedure for the memory system based on (e.g., in response to) determining that the memory system is in the off state.

In some examples, the operation mode manager 530 may be configured as or otherwise support a means for controlling a voltage applied to the memory system based on (e.g., in accordance with) operating according to the second mode of operation.

In some examples, the refresh command corresponds to one or more quad-level memory cells (e.g., QLCs) of the memory system. In some examples, the refresh command configures the memory system to reprogram data from one or more first blocks corresponding to the one or more quad-level memory cells to one or more second blocks corresponding to the one or more quad-level memory cells while a temperature associated with the memory system satisfies a target temperature range.

FIG. 6 shows a block diagram 600 of a memory system 620 that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein. The memory system 620 may be an example of aspects of a memory system as described with reference to FIGS. 1 through 4 . The memory system 620, or various components thereof, may be an example of means for performing various aspects supporting an interface for refreshing a memory device of a vehicle after parking as described herein. For example, the memory system 620 may include a refresh capability transmitter 625, a refresh command receiver 630, a refresh operation manager 635, a power command receiver 640, a data identification component 645, a data programming component 650, an operation state manager 655, a block list manager 660, or any combination thereof. Each of these components may communicate, directly or indirectly, with one another (e.g., via one or more buses). The memory system 620 may include a controller associated with a memory device, and the memory system 620 may be a component of a vehicle.

The refresh capability transmitter 625 may be configured as or otherwise support a means for transmitting, to a host system, an indication of a refresh capability of the memory system, the refresh capability associated with a refresh operation including reprogramming data from one or more non-volatile first blocks of the memory system to one or more non-volatile second blocks of the memory system. The refresh command receiver 630 may be configured as or otherwise support a means for receiving, from the host system, a refresh command based on (e.g., using) the refresh capability of the memory system. The refresh operation manager 635 may be configured as or otherwise support a means for performing the refresh operation for the one or more non-volatile first blocks of the memory system based on (e.g., in response to) the refresh command.

In some examples, the power command receiver 640 may be configured as or otherwise support a means for receiving, from the host system and after performing the refresh operation, a power off command. In some examples, the data identification component 645 may be configured as or otherwise support a means for identifying data stored in volatile memory of the memory system based on (e.g., in response to) the power off command. In some examples, the data programming component 650 may be configured as or otherwise support a means for programming the data to non-volatile memory of the memory system based on (e.g., in response to) the power off command. In some examples, the operation state manager 655 may be configured as or otherwise support a means for entering an off state after programming the data to the non-volatile memory and based on (e.g., in response to) the power off command.

In some examples, the power command receiver 640 may be configured as or otherwise support a means for receiving, from the host system and before performing the refresh operation, a power off command for the memory system while operating in a first power mode. In some examples, the data identification component 645 may be configured as or otherwise support a means for identifying data stored in volatile memory of the memory system based on (e.g., in response to) the power off command. In some examples, the data programming component 650 may be configured as or otherwise support a means for programming the data to non-volatile memory of the memory system based on (e.g., in response to) the power off command. In some examples, the operation state manager 655 may be configured as or otherwise support a means for entering an off state after programming the data to the non-volatile memory and based on (e.g., in response to) the power off command. In some examples, the operation state manager 655 may be configured as or otherwise support a means for switching, after entering the off state, to a second power mode based on (e.g., in response to) a trigger from the host system, where the second power mode is associated with lower power consumption than the first power mode, and where the refresh command is received while operating in the second power mode.

In some examples, the block list manager 660 may be configured as or otherwise support a means for storing a list of non-volatile memory blocks in volatile memory of the memory system, where the list of non-volatile memory blocks indicates the one or more non-volatile first blocks of the memory system to refresh during the refresh operation.

In some examples, the block list manager 660 may be configured as or otherwise support a means for adding a block identifier to the list of non-volatile memory blocks based on (e.g., in response to) a non-volatile memory block corresponding to the block identifier being programmed at a temperature satisfying a threshold temperature, detecting a quantity of errors satisfying a threshold quantity of errors for the non-volatile memory block corresponding to the block identifier, or both.

In some examples, the data programming component 650 may be configured as or otherwise support a means for programming the list of non-volatile memory blocks to non-volatile memory of the memory system prior to entering an off state.

In some examples, the data programming component 650 may be configured as or otherwise support a means for reprogramming the data from the one or more non-volatile first blocks of the memory system to the one or more non-volatile second blocks of the memory system while a temperature associated with the memory system satisfies a target temperature range based on (e.g., in response to) performing the refresh operation.

In some examples, the one or more non-volatile first blocks of the memory system are each configured to store at least four bits of information.

FIG. 7 shows a block diagram 700 of a vehicle system 720 that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein. The vehicle system 720 may be an example of aspects of a vehicle system as described with reference to FIGS. 1 through 4 . The vehicle system 720, or various components thereof, may be an example of means for performing various aspects supporting an interface for refreshing a memory device of a vehicle after parking as described herein. For example, the vehicle system 720 may include a power source manager 725, an operation state manager 730, a block refresh component 735, a refresh command manager 740, or any combination thereof. Each of these components may communicate, directly or indirectly, with one another (e.g., via one or more buses). The vehicle system 720 may be an example of a vehicle including a host system coupled with a memory system.

The power source manager 725 may be configured as or otherwise support a means for providing a first voltage from a power source to a host system controller based on (e.g., according to) the vehicle operating in an active state. The operation state manager 730 may be configured as or otherwise support a means for determining whether the vehicle is powering down from the active state to an off state. In some examples, the power source manager 725 may be configured as or otherwise support a means for providing a second voltage from the power source to the host system controller based on (e.g., in response to) determining that the vehicle is powering down, where the second voltage is less than the first voltage. The block refresh component 735 may be configured as or otherwise support a means for refreshing one or more non-volatile memory blocks of a memory system while the vehicle is in the off state based on (e.g., in response to) the host system controller being provided the second voltage from the power source.

In some examples, the refresh command manager 740 may be configured as or otherwise support a means for issuing a refresh command from the host system controller and to the memory system based on (e.g., due to) the second voltage being provided to the host system controller, where the refreshing is based on (e.g., in response to) the refresh command.

FIG. 8 shows a flowchart illustrating a method 800 that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein. The operations of method 800 may be implemented by a host system or its components as described herein. For example, the operations of method 800 may be performed by a host system as described with reference to FIGS. 1 through 5 . In some examples, a host system may execute a set of instructions to control the functional elements of the device to perform the described functions. Additionally or alternatively, the host system may perform aspects of the described functions using special-purpose hardware.

At 805, the method may include receiving an indication that a vehicle is powering down. The operations of 805 may be performed in accordance with examples as disclosed herein. In some examples, aspects of the operations of 805 may be performed by a power indication receiver 525 as described with reference to FIG. 5 .

At 810, the method may include switching, from a first mode of operation corresponding to a first power usage by the host system, to a second mode of operation corresponding to a second power usage by the host system lower than the first power usage, where the switching is based on (e.g., in response to) the indication that the vehicle is powering down. The operations of 810 may be performed in accordance with examples as disclosed herein. In some examples, aspects of the operations of 810 may be performed by an operation mode manager 530 as described with reference to FIG. 5 .

At 815, the method may include transmitting, to a memory system, a refresh command based on (e.g., in accordance with) operating according to the second mode of operation. The operations of 815 may be performed in accordance with examples as disclosed herein. In some examples, aspects of the operations of 815 may be performed by a refresh command transmitter 535 as described with reference to FIG. 5 .

In some examples, an apparatus as described herein may perform a method or methods, such as the method 800. The apparatus may include, features, circuitry, logic, means, or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by a processor) for receiving an indication that a vehicle is powering down, switching, from a first mode of operation corresponding to a first power usage by the host system, to a second mode of operation corresponding to a second power usage by the host system lower than the first power usage, where the switching is based on (e.g., in response to) the indication that the vehicle is powering down, and transmitting, to a memory system, a refresh command based on (e.g., in accordance with) operating according to the second mode of operation.

Some examples of the method 800 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for receiving, from the memory system, an indication of a refresh capability of the memory system, where the refresh command may be transmitted based on (e.g., using a trigger defined by) the refresh capability of the memory system.

Some examples of the method 800 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for transmitting, to the memory system, a boot command indicating a boot procedure for the memory system, where the indication of the refresh capability may be received in connection with the boot procedure for the memory system.

In some examples of the method 800 and the apparatus described herein, the refresh capability of the memory system includes a threshold duration between refresh operations for the memory system, a duration for performing a refresh operation at the memory system, a threshold temperature for programming data to the memory system, a target temperature range for programming the data to the memory system, a data retention capability of the memory system, cross-temperature handling information for the memory system, a quantity of memory cell levels for the memory system, or any combination thereof.

Some examples of the method 800 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for determining whether a threshold time has passed since receiving the indication that the vehicle is powering down, where the refresh command may be transmitted based on (e.g., in response to) determining that the threshold time may have passed.

In some examples of the method 800 and the apparatus described herein, the threshold time includes a first threshold time and the refresh command may be transmitted prior to a second threshold time passing since receiving the indication that the vehicle is powering down.

Some examples of the method 800 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for detecting a temperature value and determining whether the temperature value satisfies a threshold temperature, where the refresh command may be transmitted based on (e.g., in response to) determining that the temperature value satisfies the threshold temperature.

In some examples of the method 800 and the apparatus described herein, the threshold temperature includes a range of temperature values and the temperature value satisfies the threshold temperature based on (e.g., in response to) the temperature value being within the range of temperature values.

Some examples of the method 800 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for transmitting, after transmitting the refresh command, a power off command to the memory system based on (e.g., in response to) the indication that the vehicle is powering down.

Some examples of the method 800 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for transmitting, before transmitting the refresh command, a power off command to the memory system operating in a first power mode based on (e.g., in response to) the indication that the vehicle is powering down and activating the memory system to operate in a second power mode associated with lower power consumption by the memory system than the first power mode based on (e.g., in accordance with) operating according to the second mode of operation, where the refresh command may be transmitted while the memory system is operating in the second power mode.

Some examples of the method 800 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for receiving an indication that the vehicle is powering up and determining whether the memory system is in an off state based on (e.g., in response to) the indication that the vehicle is powering up and operating according to the second mode of operation.

Some examples of the method 800 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for determining an ongoing operation at the memory system based on (e.g., in response to) determining that the memory system is in an on state and managing the ongoing operation at the memory system.

Some examples of the method 800 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for transmitting, to the memory system, a boot command to initiate a boot procedure for the memory system based on (e.g., in response to) determining that the memory system is in the off state.

Some examples of the method 800 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for controlling a voltage applied to the memory system based on (e.g., in accordance with) operating according to the second mode of operation.

In some examples of the method 800 and the apparatus described herein, the refresh command corresponds to one or more quad-level memory cells of the memory system, and the refresh command configures the memory system to reprogram data from one or more first blocks corresponding to the one or more quad-level memory cells to one or more second blocks corresponding to the one or more quad-level memory cells while a temperature associated with the memory system satisfies a target temperature range.

FIG. 9 shows a flowchart illustrating a method 900 that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein. The operations of method 900 may be implemented by a memory system or its components as described herein. For example, the operations of method 900 may be performed by a memory system as described with reference to FIGS. 1 through 4 and 6 . In some examples, a memory system may execute a set of instructions to control the functional elements of the device to perform the described functions. Additionally or alternatively, the memory system may perform aspects of the described functions using special-purpose hardware.

At 905, the method may include transmitting, to a host system, an indication of a refresh capability of the memory system, the refresh capability associated with a refresh operation involving reprogramming data from one or more non-volatile first blocks of the memory system to one or more non-volatile second blocks of the memory system. The operations of 905 may be performed in accordance with examples as disclosed herein. In some examples, aspects of the operations of 905 may be performed by a refresh capability transmitter 625 as described with reference to FIG. 6 .

At 910, the method may include receiving, from the host system, a refresh command based on (e.g., in response to transmitting) the refresh capability of the memory system. The operations of 910 may be performed in accordance with examples as disclosed herein. In some examples, aspects of the operations of 910 may be performed by a refresh command receiver 630 as described with reference to FIG. 6 .

At 915, the method may include performing the refresh operation for the one or more non-volatile first blocks of the memory system based on (e.g., in response to receiving) the refresh command. The operations of 915 may be performed in accordance with examples as disclosed herein. In some examples, aspects of the operations of 915 may be performed by a refresh operation manager 635 as described with reference to FIG. 6 .

In some examples, an apparatus as described herein may perform a method or methods, such as the method 900. The apparatus may include, features, circuitry, logic, means, or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by a processor) for transmitting, to a host system, an indication of a refresh capability of the memory system, the refresh capability associated with a refresh operation including reprogramming data from one or more non-volatile first blocks of the memory system to one or more non-volatile second blocks of the memory system, receiving, from the host system, a refresh command based on (e.g., in response to transmitting) the refresh capability of the memory system, and performing the refresh operation for the one or more first blocks of the memory system based on (e.g., in response to receiving) the refresh command.

Some examples of the method 900 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for receiving, from the host system and after performing the refresh operation, a power off command, identifying data stored in volatile memory of the memory system based on (e.g., in response to) the power off command, programming the data to non-volatile memory of the memory system based on (e.g., in response to) the power off command, and entering an off state after programming the data to the non-volatile memory and based on (e.g., in response to) the power off command.

Some examples of the method 900 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for receiving, from the host system and before performing the refresh operation, a power off command for the memory system while operating in a first power mode, identifying data stored in volatile memory of the memory system based on (e.g., in response to) the power off command, programming the data to non-volatile memory of the memory system based on (e.g., in response to) the power off command, entering an off state after programming the data to the non-volatile memory and based on (e.g., in response to) the power off command, and switching, after entering the off state, to a second power mode based on (e.g., in response to) a trigger from the host system, where the second power mode may be associated with lower power consumption than the first power mode, and where the refresh command may be received while operating in the second power mode.

Some examples of the method 900 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for storing a list of non-volatile memory blocks in volatile memory of the memory system, where the list of non-volatile memory blocks indicates the one or more non-volatile first blocks of the memory system to refresh during the refresh operation.

Some examples of the method 900 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for adding a block identifier to the list of non-volatile memory blocks based on (e.g., in response to) a non-volatile memory block corresponding to the block identifier being programmed at a temperature satisfying a threshold temperature, detecting a quantity of errors satisfying a threshold quantity of errors for the non-volatile memory block corresponding to the block identifier, or both.

Some examples of the method 900 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for programming the list of non-volatile memory blocks to non-volatile memory of the memory system prior to entering an off state.

Some examples of the method 900 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for reprogramming the data from the one or more non-volatile first blocks of the memory system to the one or more non-volatile second blocks of the memory system while a temperature associated with the memory system satisfies a target temperature range based on (e.g., in response to) performing the refresh operation.

In some examples of the method 900 and the apparatus described herein, the one or more non-volatile first blocks of the memory system may be each configured to store at least four bits of information.

FIG. 10 shows a flowchart illustrating a method 1000 that supports an interface for refreshing non-volatile memory in accordance with examples as disclosed herein. The operations of method 1000 may be implemented by a vehicle system or its components as described herein. For example, the operations of method 1000 may be performed by a vehicle system as described with reference to FIGS. 1 through 4 and 7 . In some examples, a vehicle system may execute a set of instructions to control the functional elements of the device to perform the described functions. Additionally or alternatively, the vehicle system may perform aspects of the described functions using special-purpose hardware.

At 1005, the method may include providing a first voltage from a power source to a host system controller based on (e.g., in accordance with) the vehicle operating in an active state. The operations of 1005 may be performed in accordance with examples as disclosed herein. In some examples, aspects of the operations of 1005 may be performed by a power source manager 725 as described with reference to FIG. 7 .

At 1010, the method may include determining whether the vehicle is powering down from the active state to an off state. The operations of 1010 may be performed in accordance with examples as disclosed herein. In some examples, aspects of the operations of 1010 may be performed by an operation state manager 730 as described with reference to FIG. 7 .

At 1015, the method may include providing a second voltage from the power source to the host system controller based on (e.g., in response to) determining that the vehicle is powering down, where the second voltage is less than the first voltage. The operations of 1015 may be performed in accordance with examples as disclosed herein. In some examples, aspects of the operations of 1015 may be performed by a power source manager 725 as described with reference to FIG. 7 .

At 1020, the method may include refreshing one or more non-volatile memory blocks of a memory system while the vehicle is in the off state based on (e.g., in response to) the host system controller being provided the second voltage from the power source. The operations of 1020 may be performed in accordance with examples as disclosed herein. In some examples, aspects of the operations of 1020 may be performed by a block refresh component 735 as described with reference to FIG. 7 .

In some examples, an apparatus as described herein may perform a method or methods, such as the method 1000. The apparatus may include, features, circuitry, logic, means, or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by a processor) for providing a first voltage from a power source to a host system controller based on (e.g., in accordance with) the vehicle operating in an active state, determining whether the vehicle is powering down from the active state to an off state, providing a second voltage from the power source to the host system controller based on (e.g., in response to) determining that the vehicle is powering down, where the second voltage is less than the first voltage, and refreshing one or more non-volatile memory blocks of a memory system while the vehicle is in the off state based on (e.g., in response to) the host system controller being provided the second voltage from the power source.

Some examples of the method 1000 and the apparatus described herein may further include operations, features, circuitry, logic, means, or instructions for issuing a refresh command from the host system controller and to the memory system based on (e.g., using) the second voltage being provided to the host system controller, where the refreshing may be based on (e.g., in response to) the refresh command.

It should be noted that the methods described above describe possible implementations, and that the operations and the steps may be rearranged or otherwise modified and that other implementations are possible. Further, portions from two or more of the methods may be combined.

Information and signals described herein may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be referenced throughout the above description may be represented by voltages, currents, electromagnetic waves, magnetic fields or particles, optical fields or particles, or any combination thereof. Some drawings may illustrate signals as a single signal; however, the signal may represent a bus of signals, where the bus may have a variety of bit widths.

The terms “electronic communication,” “conductive contact,” “connected,” and “coupled” may refer to a relationship between components that supports the flow of signals between the components. Components are considered in electronic communication with (or in conductive contact with or connected with or coupled with) one another if there is any conductive path between the components that can, at any time, support the flow of signals between the components. At any given time, the conductive path between components that are in electronic communication with each other (or in conductive contact with or connected with or coupled with) may be an open circuit or a closed circuit according to the operation of the device that includes the connected components. The conductive path between connected components may be a direct conductive path between the components or the conductive path between connected components may be an indirect conductive path that may include intermediate components, such as switches, transistors, or other components. In some examples, the flow of signals between the connected components may be interrupted for a time, for example, using one or more intermediate components such as switches or transistors.

The term “coupling” refers to a condition of moving from an open-circuit relationship between components in which signals are not presently capable of being communicated between the components over a conductive path to a closed-circuit relationship between components in which signals are capable of being communicated between components over the conductive path. If a component, such as a controller, couples other components together, the component initiates a change that allows signals to flow between the other components over a conductive path that previously did not permit signals to flow.

The term “isolated” refers to a relationship between components in which signals are not presently capable of flowing between the components. Components are isolated from each other if there is an open circuit between them. For example, two components separated by a switch that is positioned between the components are isolated from each other if the switch is open. If a controller isolates two components, the controller affects a change that prevents signals from flowing between the components using a conductive path that previously permitted signals to flow.

As used herein, the term “substantially” means that the modified characteristic (e.g., a verb or adjective modified by the term substantially) may not be absolute but may be close enough to achieve the advantages of the characteristic.

The term “in response to” may refer to one condition or action occurring at least partially, if not fully, as a result of a previous condition or action. For example, a first condition or action may be performed and second condition or action may at least partially occur as a result of the previous condition or action occurring (whether directly after or after one or more other intermediate conditions or actions occurring after the first condition or action).

Additionally, the terms “directly in response to” or “in direct response to” may refer to one condition or action occurring as a direct result of a previous condition or action. In some examples, a first condition or action may be performed and second condition or action may occur directly as a result of the previous condition or action occurring independent of whether other conditions or actions occur. In some examples, a first condition or action may be performed and second condition or action may occur directly as a result of the previous condition or action occurring, such that no other intermediate conditions or actions occur between the earlier condition or action and the second condition or action or a limited quantity of one or more intermediate steps or actions occur between the earlier condition or action and the second condition or action. Any condition or action described herein as being performed “based on,” “based at least in part on,” or “in response to” some other step, action, event, or condition may additionally or alternatively (e.g., in an alternative example) be performed “in direct response to” or “directly in response to” such other condition or action unless otherwise specified.

The devices discussed herein, including a memory array, may be formed on a semiconductor substrate, such as silicon, germanium, silicon-germanium alloy, gallium arsenide, gallium nitride, etc. In some examples, the substrate is a semiconductor wafer. In some other examples, the substrate may be a silicon-on-insulator (SOI) substrate, such as silicon-on-glass (SOG) or silicon-on-sapphire (SOP), or epitaxial layers of semiconductor materials on another substrate. The conductivity of the substrate, or sub-regions of the substrate, may be controlled through doping using various chemical species including, but not limited to, phosphorous, boron, or arsenic. Doping may be performed during the initial formation or growth of the substrate, by ion-implantation, or by any other doping means.

A switching component or a transistor discussed herein may represent a field-effect transistor (FET) and comprise a three terminal device including a source, drain, and gate. The terminals may be connected to other electronic elements through conductive materials, e.g., metals. The source and drain may be conductive and may comprise a heavily-doped, e.g., degenerate, semiconductor region. The source and drain may be separated by a lightly-doped semiconductor region or channel. If the channel is n-type (i.e., majority carriers are electrons), then the FET may be referred to as an n-type FET. If the channel is p-type (i.e., majority carriers are holes), then the FET may be referred to as a p-type FET. The channel may be capped by an insulating gate oxide. The channel conductivity may be controlled by applying a voltage to the gate. For example, applying a positive voltage or negative voltage to an n-type FET or a p-type FET, respectively, may result in the channel becoming conductive. A transistor may be “on” or “activated” if a voltage greater than or equal to the transistor's threshold voltage is applied to the transistor gate. The transistor may be “off” or “deactivated” if a voltage less than the transistor's threshold voltage is applied to the transistor gate.

The description set forth herein, in connection with the appended drawings, describes example configurations and does not represent all the examples that may be implemented or that are within the scope of the claims. The term “exemplary” used herein means “serving as an example, instance, or illustration” and not “preferred” or “advantageous over other examples.” The detailed description includes specific details to providing an understanding of the described techniques. These techniques, however, may be practiced without these specific details. In some instances, well-known structures and devices are shown in block diagram form to avoid obscuring the concepts of the described examples.

In the appended figures, similar components or features may have the same reference label. Further, various components of the same type may be distinguished by following the reference label by a hyphen and a second label that distinguishes among the similar components. If just the first reference label is used in the specification, the description is applicable to any one of the similar components having the same first reference label irrespective of the second reference label.

The functions described herein may be implemented in hardware, software executed by a processor, firmware, or any combination thereof. If implemented in software executed by a processor, the functions may be stored on or transmitted over, as one or more instructions or code, a computer-readable medium. Other examples and implementations are within the scope of the disclosure and appended claims. For example, due to the nature of software, functions described above can be implemented using software executed by a processor, hardware, firmware, hardwiring, or combinations of any of these. Features implementing functions may also be physically located at various positions, including being distributed such that portions of functions are implemented at different physical locations.

For example, the various illustrative blocks and components described in connection with the disclosure herein may be implemented or performed with a general-purpose processor, a DSP, an ASIC, an FPGA or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. A general-purpose processor may be a microprocessor, but in the alternative, the processor may be any processor, controller, microcontroller, or state machine. A processor may be implemented as a combination of computing devices (e.g., a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration).

As used herein, including in the claims, “or” as used in a list of items (for example, a list of items prefaced by a phrase such as “at least one of” or “one or more of”) indicates an inclusive list such that, for example, a list of at least one of A, B, or C means A or B or C or AB or AC or BC or ABC (i.e., A and B and C).

Computer-readable media includes both non-transitory computer storage media and communication media including any medium that facilitates transfer of a computer program from one place to another. A non-transitory storage medium may be any available medium that can be accessed by a general purpose or special purpose computer. By way of example, and not limitation, non-transitory computer-readable media can comprise RAM, ROM, electrically erasable programmable read-only memory (EEPROM), compact disk (CD) ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other non-transitory medium that can be used to carry or store desired program code means in the form of instructions or data structures and that can be accessed by a general-purpose or special-purpose computer, or a general-purpose or special-purpose processor. Also, any connection is properly termed a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using a coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or technologies such as infrared, radio, and microwave are included in the definition of medium. Disk and disc, as used herein, include CD, laser disc, optical disc, digital versatile disc (DVD), floppy disk, and Blu-ray disc, where disks usually reproduce data magnetically, while discs reproduce data optically with lasers. Combinations of the above are also included within the scope of computer-readable media.

The description herein is provided to enable a person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the scope of the disclosure. Thus, the disclosure is not limited to the examples and designs described herein but is to be accorded the broadest scope consistent with the principles and novel features disclosed herein. 

What is claimed is:
 1. An apparatus, comprising: a controller configured to couple with a memory system, wherein the controller is configured to cause the apparatus to: receive an indication that a vehicle is powering down; switch, from a first mode of operation corresponding to a first power usage by a host system, to a second mode of operation corresponding to a second power usage by the host system lower than the first power usage, wherein the switching is based at least in part on the indication that the vehicle is powering down; transmit, to the memory system, a refresh command based at least in part on operating according to the second mode of operation.
 2. The apparatus of claim 1, wherein the controller is further configured to cause the apparatus to: receive, from the memory system, an indication of a refresh capability of the memory system, wherein the refresh command is transmitted based at least in part on the refresh capability of the memory system.
 3. The apparatus of claim 2, wherein the controller is further configured to cause the apparatus to: transmit, to the memory system, a boot command indicating a boot procedure for the memory system, wherein the indication of the refresh capability is received in connection with the boot procedure for the memory system.
 4. The apparatus of claim 2, wherein the refresh capability of the memory system comprises a threshold duration between refresh operations for the memory system, a duration for performing a refresh operation at the memory system, a threshold temperature for programming data to the memory system, a target temperature range for programming the data to the memory system, a data retention capability of the memory system, cross-temperature handling information for the memory system, a quantity of memory cell levels for the memory system, or any combination thereof.
 5. The apparatus of claim 1, wherein the controller is further configured to cause the apparatus to: determine whether a threshold time has passed since receiving the indication that the vehicle is powering down, wherein the refresh command is transmitted based at least in part on determining that the threshold time has passed.
 6. The apparatus of claim 5, wherein: the threshold time comprises a first threshold time; and the refresh command is transmitted prior to a second threshold time passing since receiving the indication that the vehicle is powering down.
 7. The apparatus of claim 1, wherein the controller is further configured to cause the apparatus to: detect a temperature value; and determine whether the temperature value satisfies a threshold temperature, wherein the refresh command is transmitted based at least in part on determining that the temperature value satisfies the threshold temperature.
 8. The apparatus of claim 7, wherein: the threshold temperature comprises a range of temperature values; and the temperature value satisfies the threshold temperature based at least in part on the temperature value being within the range of temperature values.
 9. The apparatus of claim 1, wherein the controller is further configured to cause the apparatus to: transmit, after transmitting the refresh command, a power off command to the memory system based at least in part on the indication that the vehicle is powering down.
 10. The apparatus of claim 1, wherein the controller is further configured to cause the apparatus to: transmit, before transmitting the refresh command, a power off command to the memory system operating in a first power mode based at least in part on the indication that the vehicle is powering down; and activate the memory system to operate in a second power mode associated with lower power consumption by the memory system than the first power mode based at least in part on operating according to the second mode of operation, wherein the refresh command is transmitted while the memory system is operating in the second power mode.
 11. The apparatus of claim 1, wherein the controller is further configured to cause the apparatus to: receive an indication that the vehicle is powering up; and determine whether the memory system is in an off state based at least in part on the indication that the vehicle is powering up and operating according to the second mode of operation.
 12. The apparatus of claim 11, wherein the controller is further configured to cause the apparatus to: determine an ongoing operation at the memory system based at least in part on determining that the memory system is in an on state; and manage the ongoing operation at the memory system.
 13. The apparatus of claim 11, wherein the controller is further configured to cause the apparatus to: transmit, to the memory system, a boot command to initiate a boot procedure for the memory system based at least in part on determining that the memory system is in the off state.
 14. The apparatus of claim 1, wherein the controller is further configured to cause the apparatus to: control a voltage applied to the memory system based at least in part on operating according to the second mode of operation.
 15. The apparatus of claim 1, wherein: the refresh command corresponds to one or more quad-level memory cells of the memory system; and the refresh command configures the memory system to reprogram data from one or more first blocks corresponding to the one or more quad-level memory cells to one or more second blocks corresponding to the one or more quad-level memory cells while a temperature associated with the memory system satisfies a target temperature range.
 16. An apparatus, comprising: a memory device; and a controller coupled with the memory device and configured to cause the apparatus to: transmit, to a host system, an indication of a refresh capability of a memory system, the refresh capability associated with a refresh operation comprising reprogramming data from one or more non-volatile first blocks of the memory system to one or more non-volatile second blocks of the memory system; receive, from the host system, a refresh command based at least in part on the refresh capability of the memory system; and perform the refresh operation for the one or more non-volatile first blocks of the memory system based at least in part on the refresh command.
 17. The apparatus of claim 16, wherein the controller is further configured to cause the apparatus to: receive, from the host system and after performing the refresh operation, a power off command; identify data stored in volatile memory of the memory system based at least in part on the power off command; program the data to non-volatile memory of the memory system based at least in part on the power off command; and enter an off state after programming the data to the non-volatile memory and based at least in part on the power off command.
 18. The apparatus of claim 16, wherein the controller is further configured to cause the apparatus to: receive, from the host system and before performing the refresh operation, a power off command for the memory system while operating in a first power mode; identify data stored in volatile memory of the memory system based at least in part on the power off command; program the data to non-volatile memory of the memory system based at least in part on the power off command; enter an off state after programming the data to the non-volatile memory and based at least in part on the power off command; and switch, after entering the off state, to a second power mode based at least in part on a trigger from the host system, wherein the second power mode is associated with lower power consumption than the first power mode, and wherein the refresh command is received while operating in the second power mode.
 19. The apparatus of claim 16, wherein the controller is further configured to cause the apparatus to: store a list of non-volatile memory blocks in volatile memory of the memory system, wherein the list of non-volatile memory blocks indicates the one or more non-volatile first blocks of the memory system to refresh during the refresh operation.
 20. The apparatus of claim 19, wherein the controller is further configured to cause the apparatus to: add a block identifier to the list of non-volatile memory blocks based at least in part on a non-volatile memory block corresponding to the block identifier being programmed at a temperature satisfying a threshold temperature, detecting a quantity of errors satisfying a threshold quantity of errors for the non-volatile memory block corresponding to the block identifier, or both.
 21. The apparatus of claim 19, wherein the controller is further configured to cause the apparatus to: program the list of non-volatile memory blocks to non-volatile memory of the memory system prior to entering an off state.
 22. The apparatus of claim 16, wherein the controller is further configured to cause the apparatus to: reprogram the data from the one or more non-volatile first blocks of the memory system to the one or more non-volatile second blocks of the memory system while a temperature associated with the memory system satisfies a target temperature range based at least in part on performing the refresh operation.
 23. The apparatus of claim 16, wherein: the one or more non-volatile first blocks of the memory system are each configured to store at least four bits of information.
 24. An apparatus, comprising: a host system configured to couple with a memory system; and a controller associated with the host system and the memory system, wherein the controller is configured to cause the apparatus to: provide a first voltage from a power source to a host system controller based at least in part on a vehicle operating in an active state; determine whether the vehicle is powering down from the active state to an off state; provide a second voltage from the power source to the host system controller based at least in part on determining that the vehicle is powering down, wherein the second voltage is less than the first voltage; and refresh one or more non-volatile memory blocks of the memory system while the vehicle is in the off state based at least in part on the host system controller being provided the second voltage from the power source.
 25. The apparatus of claim 24, wherein the controller is further configured to cause the apparatus to: issue a refresh command from the host system controller and to the memory system based at least in part on the second voltage being provided to the host system controller, wherein the refreshing is based at least in part on the refresh command. 